Sputtering cathode based on the magnetron principle

Details Sputtering cathode based on the magnetron principle Sputtering cathode based on the magnetron principle

1987-11-30

1990-06-12

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429821, C23C 1434

Patent

active

049330640

ABSTRACT:
A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.

REFERENCES:
patent: 4431505 (1984-02-01), Morrison, Jr.
patent: 4486287 (1984-12-01), Fournier
patent: 4515675 (1985-05-01), Kieser et al.
patent: 4572776 (1986-02-01), Aichert et al.

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