Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2008-12-17
2010-06-29
McDonald, Rodney G (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192260, C204S298110, C204S298140, C204S298200, C204S298250
Reexamination Certificate
active
07744731
ABSTRACT:
A sputtering deposit apparatus capable of depositing a thin film having uniform sheet resistance value is provided. The sputtering deposit apparatus is arranged with at least two magnetron sputtering units within a film deposit chamber. On the upstream side in the substrate transfer direction43of the target shield55provided on the magnetron sputtering unit disposed on the most upstream side in the substrate transfer direction, of at least the two magnetron sputtering units, there is disposed the first cathode shield62which is electrically insulated.
REFERENCES:
patent: 5833815 (1998-11-01), Kim et al.
patent: 2003/0089601 (2003-05-01), Ding et al.
patent: 63-103060 (1988-05-01), None
patent: 08-167479 (1996-06-01), None
patent: 09-272973 (1997-10-01), None
patent: 10/046334 (1998-02-01), None
patent: 11/246969 (1999-09-01), None
patent: 2000-345335 (2000-12-01), None
patent: 2002-146528 (2002-05-01), None
patent: 2002-220663 (2002-08-01), None
patent: 2005-510045 (2005-04-01), None
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
McDonald Rodney G
LandOfFree
Sputtering apparatus of forming thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtering apparatus of forming thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering apparatus of forming thin film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4245711