Sputtering apparatus for forming thin films

Details Sputtering apparatus for forming thin films Sputtering apparatus for forming thin films

1989-12-14

1992-02-04

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429819, C23C 1434

Patent

active

050857550

ABSTRACT:
An apparatus for forming a thin film of a given material on one or more substrates comprises a vacuum vessel, a first electrode which is provided in the vacuum vessel for holding a target plate of the given material thereon, a second electrode which is provided opposite to the first electrode in the vacuum vessel to form a discharge space between the first and second electrodes and holds the substrate(s) thereon, a gas conduit for supplying a sputtering gas into the discharge space, power sources for applying a discharge voltage between the first and second electrodes to generate a discharge plasma of the sputtering gas, and a magnetic field generating device which is provided to surround the discharge space and generates a magnetic field effective to prevent the discharge plasma from diffusing to the outside of the discharge space.

REFERENCES:
patent: 2239642 (1941-04-01), Burkhardt et al.
patent: 3325394 (1967-06-01), Kay et al.
patent: 3669860 (1972-06-01), Knowles et al.
patent: 3849283 (1974-11-01), Jackson et al.
patent: 4025410 (1977-05-01), Stewart
patent: 4405436 (1983-09-01), Kobayashi et al.
patent: 4610770 (1986-09-01), Saito et al.
patent: 4673482 (1987-06-01), Setoyama et al.
patent: 4880515 (1989-11-01), Yoshikawa et al.
patent: 4891560 (1990-01-01), Okumura et al.

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