Sputtering apparatus for forming metal lines

Details Sputtering apparatus for forming metal lines Sputtering apparatus for forming metal lines

1995-05-24

1997-03-25

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419217, 20429809, 20429815, 20429825, C23C 1434, C23C 1456

Patent

active

056140703

ABSTRACT:
A vacuum sputtering apparatus for forming metal lines on a semiconductor wafer, including an annular reactive gas injector and a silicon carbide chuck for direct uniform heating of the wafer to a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C., thereby allowing the deposition of titanium and titanium nitride layers having uniform thickness and composition.

REFERENCES:
patent: 5340459 (1994-08-01), Takehara

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