Sputtering apparatus and film deposition method

Details Sputtering apparatus and film deposition method Sputtering apparatus and film deposition method

2011-06-07

2011-06-07

McDonald, Rodney G (Department: 1724)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192130, C204S298030, C204S298110, C204S298230, C204S298280, C204S298290, C204S298190, C204S298170

Reexamination Certificate

active

07955480

ABSTRACT:
The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

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