Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2007-06-12
2007-06-12
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192110, C204S298040, C204S298110, C204S298230, C204S298270, C204S298280, C204S298290
Reexamination Certificate
active
10795315
ABSTRACT:
A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.
REFERENCES:
patent: 4664935 (1987-05-01), Strahl
patent: 6010600 (2000-01-01), Vernon et al.
patent: 6238531 (2001-05-01), Pinarbasi
patent: 63-266061 (1988-11-01), None
patent: 07-150347 (1995-06-01), None
patent: 09-040441 (1997-02-01), None
patent: 09-213634 (1997-08-01), None
patent: 10-30170 (1998-02-01), None
Machine Translation of Japanese 09-040441 dated Feb. 1997.
Ando Kenji
Kanazawa Hidehiro
LandOfFree
Sputtering apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtering apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3827996