Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1988-03-29
1990-10-16
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419217, 20429813, C23C 1434
Patent
active
049632400
ABSTRACT:
The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.
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Rupert H. Myers, Metallurgia, "Some Properties of Tanalum-Rich Alloys With Wolfram and Molybdenum", vol. 42, 06/1950, pp. 3-9.
R. Kieffer, et al., Journal of the Less-Common Metals, "Tungsten Alloys of High Melting Point", vol. 1, Feb. 1959, pp. 19-33.
Fukasawa Yoshiharu
Ishihara Hideo
Kawai mituo
Oana Yasuhisa
Umeki Takenori
Kabushiki Kaisha Toshiba
Nguyen Nam X.
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