Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-02-06
2007-02-06
Vinh, Lan (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S027000, C438S745000, C257S417000
Reexamination Certificate
active
11029618
ABSTRACT:
Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film formation to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.
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Fork David K.
Littau Karl A.
Solberg Scott
Bever Patrick T.
Bever Hoffman & Harms LLP
Vinh Lan
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