Sputtered silicide film

Details Sputtered silicide film Sputtered silicide film

1995-08-09

1997-03-18

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257768, H01L 2348, H01L 2352, H01L 2940

Patent

active

056125712

ABSTRACT:
According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

REFERENCES:
patent: 4886764 (1989-12-01), Miller et al.
patent: 5135685 (1992-10-01), Murata et al.
patent: 5409517 (1995-04-01), Satou et al.

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