Sputtered semiconducting films of catenated phosphorus material

Details Sputtered semiconducting films of catenated phosphorus material Sputtered semiconducting films of catenated phosphorus material

1983-06-29

1985-04-02

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192S, 357 4, 357 15, 357 61, 428620, 428426, 428432, 428938, H01L 4902, C23C 1500

Patent

active

045090661

ABSTRACT:
Amorphous and polycrystalline films of KP.sub.15 are formed by RF diode sputtering targets of KP.sub.15 and excess phosphorus in an argon phase. Substrate temperatures up to 280.degree.-300.degree. C. provide amorphous films. Higher temperatures provide microcrystalline or polycrystalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10.sup.-10 (ohm-cm).sup.-1 to 10.sup.-2 (ohm-cm).sup.-1 ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals such as titanium, nickel and aluminum. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sputtered thereon thin film polyphosphides and nickel with nickel and titanium top contacts.

REFERENCES:
E. A. Davis, J. de Physique, Colloque C4-Supplement No. 10, Tome 42, Oct. 1981, pp. C4-860.
Shanabrook and Lannin, "Structural and Vibrational Properties of Amorphous Phosphorus", Physical Review B, pp. 4771-4779, vol. 24, No. 8, Oct. 15, 1981.
Pomian, Pilione and Lannin, "Optical Absorption and Structural Order In Sputtered Amorphous Phosphorus", Journal de Physique, Coll. C4, Suppl. 10, Tome 42 Oct. 1981, pp. C4-873-C4-876.
E. A. Davis "Chemical Modification of Amorphous Arsenic", Solar Energy Materials 8, (1982), pp. 341-348.

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