Sputter target for eliminating redeposition on the target sidewa

Details Sputter target for eliminating redeposition on the target sidewa Sputter target for eliminating redeposition on the target sidewa

1996-08-23

1999-06-22

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429811, C23C 1434

Patent

active

059140186

ABSTRACT:
An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

REFERENCES:
patent: 5529673 (1996-06-01), Strauss et al.
patent: 5538603 (1996-07-01), Guo
patent: 5580428 (1996-12-01), Krinokapic et al.
patent: 5658442 (1997-08-01), Van Gogh et al.
patent: 5690795 (1997-11-01), Rosenstein et al.
Lester et al., IBM Tech. Discl. Bulletin, "Sputtering Cathode Glow Suppression Shields", vol. 20, No. 3, pp. 1177-1178, Aug. 1977.

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