Sputter target based on titanium dioxide

Details Sputter target based on titanium dioxide Sputter target based on titanium dioxide

2002-08-19

2008-10-07

McDonald, Rodney G (Department: 1795)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192220, C204S192270, C204S192280, C204S298130, C204S298120, C501S134000, C419S030000, C419S038000, C419S039000, C264S667000, C264S681000

Reexamination Certificate

active

07431808

ABSTRACT:
An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

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Article entitled “Temperable Low Emissivity Coating Based on Twin Magnetron Sputtered TiO2and Si3N4Layers” by Szczyrbowski, et al. appearing in 1999 Society of Vacuum Coaters, pp. 141-146.

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