Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Making composite or hollow article
Reexamination Certificate
1999-08-03
2001-02-06
Jenkins, Daniel J. (Department: 1753)
Powder metallurgy processes
Powder metallurgy processes with heating or sintering
Making composite or hollow article
C419S017000, C419S049000
Reexamination Certificate
active
06183686
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention pertains to a design and a method of manufacturing sputter target assemblies for magnetron sputter thin film coating processes.
Sputtering targets attached to aluminum or copper based backing plates are used to deposit thin films on substrates for semiconductor device manufacturing. These target assemblies provide mechanical and electrical attachment of the target material to the sputter apparatus, provide vacuum sealing surfaces to maintain proper chamber environment, and typically provide a path of heat removal for effective cooling of the target material during sputter deposition.
Until now, copper or aluminum backing members fulfilled these functions adequately. Recently, however, target assembly designs have increased in size, typically by 30%. During operation, traditional copper and aluminum materials do not provide enough mechanical strength to prevent excessive deformation of the target assembly which results in poor deposited film quality and may stress the target-to-backing member joint to the breaking point. Accordingly, there is a need for sputter target assemblies having increased deflection resistance with strong target-to-backing member joint strength, vacuum-capable sealing surfaces, and high heat conductivity.
SUMMARY OF THE INVENTION
The sputter target assembly of the invention comprises a target selected from the group consisting of aluminum, copper, titanium, and alloys thereof; and a backing plate comprising a metal-matrix-composite (MMC) material. In one embodiment of the sputter target assembly, the metal-matrix-composite backing plate is made of silicon carbide impregnated aluminum. The silicon carbide may be in the form of particles, fibers, or mesh.
A method of making the sputter target assembly of the invention includes the steps of providing a target material, placing the target material in a hot isostatic press (HIP) can, blending aluminum or aluminum alloy powders with silicon carbide powders to a specific ratio, placing the blended powders in the HIP can in contact with the target material, sealing the HIP can, evacuating the can, and subjecting the can to hot isostatic pressing. This process results in a fully joined assembly wherein the target material is bonded in-situ to the silicon carbide impregnated aluminum backing material.
It is an object of the invention to provide a sputter target assembly capable of withstanding high temperature stress with minimal warpage or deformation of the sputter target assembly.
It is another object of the invention to provide a sputter target assembly having a backing plate comprised of metal-matrix-composite material.
Other objects and advantages of the invention will be apparent from the following description, the accompanying drawings and the appended claims.
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Bansal Anurag
Bardus Steven L.
Qamar Sohail S.
Biebel & French
Jenkins Daniel J.
Tosoh SMD, Inc.
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