Sputter etching apparatus with plasma source having a dielectric

Details Sputter etching apparatus with plasma source having a dielectric Sputter etching apparatus with plasma source having a dielectric

1995-03-24

1996-09-17

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429831, 20429833, 20429834, 20429837, 118723R, 118723I, 156345, C23C 1434, C23F 102

Patent

active

055565212

ABSTRACT:
Apparatus for sputter etching a substrate includes a processing chamber with a plasma source coupled to the top of the processing chamber to seal the chamber and create a plasma therein. The plasma source comprises a dielectric plate having a generally centered pocket with a concave outer surface and a convex inner surface which physically extends into the processing chamber toward a substrate. An inductive coil is positioned outside the chamber generally inside the pocket and adjacent the concave surface and is preferably contoured to conform to the concave outer surface to form an inductive source relative to the substrate. The contoured inductive coil couples energy through the pocket to create a high density uniform plasma of ionized particles proximate a substrate in the chamber.

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