Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-01-26
2000-07-04
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20429806, 20429807, C23C 1434
Patent
active
060833610
ABSTRACT:
A sputtering device includes a sputter chamber equipped with a vacuum pump system; a metal target provided inside the sputter chamber; a sputtering power source for producing a sputter discharge and sputtering the target to create sputter particles; a substrate holder for holding a substrate in the position where the sputter particles land; and a gas introduction device for introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target, and produces a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone, wherein the compound can be dissociated in another region of the substrate. A method of sputtering includes the steps of producing a sputter discharge with a sputtering power source for sputtering a metal target in a sputter chamber to create sputter particles; holding a substrate in a position where the sputter particles land; introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target to produce a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone; and dissociating the compound in another region of the substrate.
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Kobayashi Masahiko
Numasawa Yoichiro
Anelva Corporation
Nguyen Nam
VerSteeg Steven H.
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