Sputter deposition system

Details Sputter deposition system Sputter deposition system

1997-04-24

1998-11-10

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429819, 2042982, 20429823, C23C 1434

Patent

active

058338152

ABSTRACT:
A sputtering apparatus is equipped with a vacuum enclosure 11, a pumping mechanism 18 that evacuates the interior of the vacuum enclosure, magnetron cathodes 12a and 12b to which are attached targets 14, a gas feed mechanism 19 that feeds sputtering gas, and a substrate transfer mechanism. An electrical discharge is generated in the vicinity of the targets, thereby sputtering the targets, and sputter deposition is performed on substrates 15 that pass by facing onto the target surfaces. The magnetron cathodes are equipped with magnetron magnetic circuits 32, which are able to move, and the magnetron magnetic circuits are equipped with magnetron reciprocating mechanisms 33 including a left-right reciprocating part that reciprocates in the substrate transfer direction, which is parallel to the target surface, and an up-down reciprocating part that reciprocates in a direction perpendicular to the substrate transfer direction.

REFERENCES:
patent: 4714536 (1987-12-01), Freeman et al.
patent: 5126029 (1992-06-01), Tomer et al.
patent: 5171415 (1992-12-01), Miller et al.

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