Sputter deposition process

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419212, 20419226, 20429811, 20429812, 20429816, 20429824, 20429826, C23C 1434, C23C 1435

Patent

active

055079318

ABSTRACT:
Magnetron cathode reactive sputtering of oxides and nitrides of bismuth, tin, gallium, and their alloys is significantly enhanced by melting the metal and reactively sputtering the molten metal, continuously removing from the sputtering surface of the molten metal oxides or nitrides formed on the sputtering surface, and moving the oxides or nitrides to an area or place outside of or removed from the sputtering plasma zone. The metal sputtering surface is thereby maintained in a clean condition to reduce the potential for arcing and to substantially increase the rate of sputtering of the metal. Sputter deposition rates and the speed of production of compound coated substrates are thereby increased several fold.

REFERENCES:
patent: 3799862 (1974-03-01), Krutenat
patent: 4322276 (1982-03-01), Meckel et al.
patent: 5158660 (1992-10-01), Devigne et al.
patent: 5415756 (1995-05-01), Wolfe et al.

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