Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-01-09
1998-11-03
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419226, 2041923, 216 12, 216 65, C23C 1434
Patent
active
058303324
ABSTRACT:
The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.
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Babich Edward D.
Callegari Alessandro Cesare
Doany Fuad Elias
Purushothaman Sampath
International Business Machines - Corporation
Morris Daniel P.
Nguyen Nam
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