Sputter-CVD process for at least partially coating a workpiece

Details Sputter-CVD process for at least partially coating a workpiece Sputter-CVD process for at least partially coating a workpiece

1989-07-13

1991-02-12

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419215, 20419231, 20429805, 20429826, C23C 1434, C23C 1430

Patent

active

049921533

ABSTRACT:
A workpiece surface is provided with a layer which is applied by a sputter-CVD process. An optimum hardness and sliding quality of the layer is obtained at a positive bias of the workpiece surface relative to the plasma. For tungsten carbide/carbon layer, an optimum layer quality is attainable at a bias of thirty-five volts. Besides tungsten carbide/carbon layers, also silicide/silicon layers can be produced if volatile silicon compounds are used as the reactive gas.

REFERENCES:
patent: 3964986 (1976-06-01), Mark
patent: 4419202 (1983-12-01), Gibson
patent: 4842710 (1989-06-01), Freller et al.
patent: 4871434 (1989-10-01), Munz et al.
"Reactivity Sputter-Deposited High Emissivity", etc., J. Vac. Sci. Technol., 18 (2), Mar. 1981, pp. 223 to 225, by E. L. Foster and G. H. Stickford.
"Thin Film Process", Academic Press, 1978, pp. 56 and 57, by J. L. Vossen and J. J. Cuomo.

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