Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-06-25
1999-04-06
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041922, 20429806, 20429811, 20429814, 20429815, 20429826, 20429819, C23C 1434
Patent
active
058913114
ABSTRACT:
Apparatus for depositing a film on a substrate includes a housing that encloses a sputtering chamber, a substrate holder for positioning a substrate in the sputtering chamber and a sputtering gun, including a sputtering target, for depositing a film of atoms of the target on a surface of the substrate. The chamber contains a gas which forms a plasma. An electrical potential is applied to the substrate for accelerating ions from the plasma toward the substrate. The apparatus includes a substrate electrode for controlling trajectories of ions accelerated from the plasma toward the substrate. The substrate electrode permits movement of the substrate by the substrate holder and establishes a substantially uniform electrical potential around the periphery of the substrate as viewed from the plasma. The substrate electrode may be biased so that ions substantially uniformly bombard the surface of the substrate.
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Amudsen et al., "Improving Uniformity of Sputtered Magnetic Films", IBM Technical Disclosure Bulletin, vol. 12, No. 11, p. 1809 , Apr. 1970.
Aragon Steven
Lewis William A.
Cole Stanley Z.
Intevac, Inc.
McDonald Rodney G.
Nguyen Nam
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