Sputter coating system and method using substrate electrode

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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2041922, 20429806, 20429811, 20429814, 20429815, 20429826, 20429819, C23C 1434

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active

058913114

ABSTRACT:
Apparatus for depositing a film on a substrate includes a housing that encloses a sputtering chamber, a substrate holder for positioning a substrate in the sputtering chamber and a sputtering gun, including a sputtering target, for depositing a film of atoms of the target on a surface of the substrate. The chamber contains a gas which forms a plasma. An electrical potential is applied to the substrate for accelerating ions from the plasma toward the substrate. The apparatus includes a substrate electrode for controlling trajectories of ions accelerated from the plasma toward the substrate. The substrate electrode permits movement of the substrate by the substrate holder and establishes a substantially uniform electrical potential around the periphery of the substrate as viewed from the plasma. The substrate electrode may be biased so that ions substantially uniformly bombard the surface of the substrate.

REFERENCES:
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patent: 4595481 (1986-06-01), Allen et al.
patent: 4997539 (1991-03-01), Komizo et al.
patent: 5688381 (1997-11-01), Gruenenfelder et al.
Amudsen et al., "Improving Uniformity of Sputtered Magnetic Films", IBM Technical Disclosure Bulletin, vol. 12, No. 11, p. 1809 , Apr. 1970.

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