Sputter chamber with extended protection plate and method of use

Details Sputter chamber with extended protection plate and method of use Sputter chamber with extended protection plate and method of use

1991-04-15

1992-08-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419237, 20429831, C23F 404

Patent

active

051376105

ABSTRACT:
A sputter chamber with a rotatably mounted cathode nested in spacers, formed of the material sold under the trademark Teflon, and a quartz plate defining wafer receiving openings therethrough and affixed to the flat upper surface of the cathode in overlying relationship with the cathode and any exposed spacers to prevent sputtering of the spacers. If the material sold under the Trademark Teflon is sputtered fluorine containing ions are produced in the chamber plasma, which chemically etch masking materials such as titanium tungsten.

REFERENCES:
patent: 3598710 (1971-08-01), Davidse
G. J. Kominiak et al, J. Vac. Sci. Technol. vol. 13, No. 6, Nov./Dec. 1976, pp. 1193-1194.

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