Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-11
2010-11-23
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S121000, C438S122000, C257SE21476
Reexamination Certificate
active
07838418
ABSTRACT:
Embodiments of a method for applying a thermal-interface material are described. During this method, a first surface of a heat-removal device and a second surface of a semiconductor die are prepared. Next, a region on a given surface, which is at least one of the first surface and the second surface, is defined. Then, the thermal-interface material is applied to at least the region, where the thermal-interface material includes a material that is a liquid metal over a range of operating temperatures of the semiconductor die.
REFERENCES:
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patent: 6060117 (2000-05-01), Pergande et al.
patent: 6504242 (2003-01-01), Deppisch et al.
patent: 6523757 (2003-02-01), Bievenue et al.
Anderson Clayton R.
Bailey Sean A.
Blanco, Jr. Richard Lidio
Crowder James M.
Hillman Michael D.
Apple Inc.
Nguyen Thanh
Park Vaughan Fleming & Dowler LLP
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