Split source RF MOSFET device

Details Split source RF MOSFET device Split source RF MOSFET device

2006-03-21

2006-03-21

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C297S369000, C297S373000, C297S383000, C297S343000, C297S288000

Reexamination Certificate

active

07015545

ABSTRACT:
An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.

REFERENCES:
patent: 6359316 (2002-03-01), Voss et al.
patent: 6429723 (2002-08-01), Hastings
patent: 6627507 (2003-09-01), Yuan

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