Static information storage and retrieval – Read/write circuit – Simultaneous operations
Patent
1991-07-15
1994-04-26
Ham, Seungsook
Static information storage and retrieval
Read/write circuit
Simultaneous operations
365222, 36523003, G11C 700
Patent
active
053073142
ABSTRACT:
The invention is an apparatus for implementing a split read/write operation in a multiple write enable dynamic random access memory (DRAM) device. A split read/write operation is an operation where the data in at least one bank is read while the data is being written to at least one remaining bank, all banks accessed by the same address. The DRAM device of the invention is also capable of a write to at least one bank and a read to at least one bank. In instances where all of the banks are not written, the banks not being written are refreshed; and in instances where all of the banks are not being read, the banks not being read are masked for a write. The invention also provides individual masking of selected memory arrays in both write and read operations.
REFERENCES:
patent: 4604695 (1986-08-01), Widen et al.
patent: 4636986 (1986-01-01), Pinkham
patent: 4675850 (1987-06-01), Kumanoya et al.
patent: 4695967 (1987-09-01), Kodama et al.
patent: 4725987 (1988-02-01), Cates
patent: 4779232 (1988-10-01), Fukunaka et al.
patent: 4847809 (1989-07-01), Suzuki
patent: 4875189 (1989-10-01), Obara
patent: 4876671 (1989-10-01), Norwood et al.
patent: 4879685 (1989-11-01), Takemae
patent: 4881206 (1989-11-01), Kadono
patent: 4958326 (1990-09-01), Sakurai
patent: 5042013 (1991-08-01), Sato
MOS data Book, Micron Technology, Inc., Jan. 1991, pp. 1-18.
Collier Susan B.
Ham Seungsook
Micro)n Technology, Inc.
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