Split gate type nonvolatile semiconductor memory device, and...

Details Split gate type nonvolatile semiconductor memory device, and... Split gate type nonvolatile semiconductor memory device, and...

2007-08-14

2007-08-14

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S201000, C257S321000, C257SE29300

Reexamination Certificate

active

11349402

ABSTRACT:
A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

REFERENCES:
patent: 5652161 (1997-07-01), Ahn
patent: 6391722 (2002-05-01), Koh
patent: 6562673 (2003-05-01), Lin
patent: 6646923 (2003-11-01), Kim
patent: 6914290 (2005-07-01), Yoo et al.
patent: 10-2003-0088826 (2003-11-01), None

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