Split gate transistor array

Details Split gate transistor array Split gate transistor array

1997-03-25

1999-08-17

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257900, 365185, H01L 2968, H01L 2978

Patent

active

059397497

ABSTRACT:
A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate electrode has an end surface. A control gate electrode is provided over the semiconductor substrate so as to overlap the floating gate electrode. The control gate electrode has an end surface formed level with the end surface of the floating gate electrode.

REFERENCES:
patent: 4861730 (1989-08-01), Hsia et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5231299 (1993-07-01), Ning et al.
patent: 5461249 (1995-10-01), Ozawa
patent: 5510639 (1996-04-01), Okuda et al.
patent: 5691937 (1997-11-01), Ohta

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