Split-gate P-channel flash memory cell with programming by...

Details Split-gate P-channel flash memory cell with programming by... Split-gate P-channel flash memory cell with programming by...

2006-09-12

2006-09-12

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185280, C365S185290

Reexamination Certificate

active

07106629

ABSTRACT:
A split-gate, P-channel flash memory cell having a band-to-band hot electron (BBHE) programming method is defined to improve the endurance characteristics of performance of the cell. The split-gate, P-channel structure, which includes a P+ drain, P+ source, floating gate and a control gate, advantageously improves protection from over-erase and hot-hole trap conditions, and improves programming speed and higher injection efficiency. The cell is erased by a polysilicon-polysilicon tunneling technique.

REFERENCES:
patent: 5130769 (1992-07-01), Kuo et al.
patent: 5706227 (1998-01-01), Chang et al.
patent: 6363012 (2002-03-01), Lin et al.
patent: 6822285 (2004-11-01), Lojek
patent: 2004/0125653 (2004-07-01), Tran et al.

Affiliated with

Also associated with

Rating

Split-gate P-channel flash memory cell with programming by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Split-gate P-channel flash memory cell with programming by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split-gate P-channel flash memory cell with programming by... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3557754