Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-01
2008-01-01
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257S321000, C257SE29264, C257SE21422, C438S257000, C438S267000
Reexamination Certificate
active
11368154
ABSTRACT:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.
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Han Jeong-Uk
Jeon Hee Seog
Kang Sung-Taeg
Kim Yong Tae
Kwon Hyok-Ki
F. Chau & Assoc, LLC
Quach T. N.
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