Split gate non-volatile flash memory cell having a floating...

Details Split gate non-volatile flash memory cell having a floating... Split gate non-volatile flash memory cell having a floating...

2011-01-11

2011-01-11

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29129

Reexamination Certificate

active

07868375

ABSTRACT:
An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in the substrate. The cell has a select gate above a portion of the channel region, a floating gate over another portion of the channel region, a control gate above the floating gate and an erase gate adjacent to the floating gate. The erase gate has an overhang extending over the floating gate. The ratio of the dimension of the overhang to the dimension of the vertical separation between the floating gate and the erase gate is between approximately 1.0 and 2.5, which improves erase efficiency.

REFERENCES:
patent: 5242848 (1993-09-01), Yeh
patent: 5268319 (1993-12-01), Harari
patent: 6747310 (2004-06-01), Fan et al.
patent: 6992929 (2006-01-01), Chen et al.

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