Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-10
2007-07-10
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S319000, C257SE29129, C257SE29300
Reexamination Certificate
active
11134540
ABSTRACT:
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.
REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 6151248 (2000-11-01), Harari et al.
patent: 6272050 (2001-08-01), Cunningham et al.
patent: 6825084 (2004-11-01), Ogura et al.
patent: 2004/0125653 (2004-07-01), Tran et al.
patent: 2004/0232473 (2004-11-01), Hsu et al.
C.Y. Shu et al., Split-Gate NAND Flash Memory At 120 nm Technology Node Featuring Fast Programming And Erase, 2004 Symposium, VLSI Technology Digest of Technical Papers, pp. 78-79.
Chen Changyuan
Cooksey John W.
Gao Feng
Lee Dana
Lin Ya-Fen
DLA Piper (US) LLP
Ho Tu-Tu
Silicon Storage Technology, Inc.
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