Split gate memory cell and method therefor

Details Split gate memory cell and method therefor Split gate memory cell and method therefor

2005-09-30

2008-11-25

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S090000, C257SE27078

Reexamination Certificate

active

07456465

ABSTRACT:
A split gate memory cell has a select gate, a control gate, and a charge storage structure. The select gate includes a first portion located over the control gate and a second portion not located over the control gate. In one example, the first portion of the select gate has a sidewall aligned with a sidewall of the control gate and aligned with a sidewall of the charge storage structure. In one example, the control gate has a p-type conductivity. In one example, the gate can be programmed by a hot carrier injection operation and can be erased by a tunneling operation.

REFERENCES:
patent: 4173766 (1979-11-01), Hayes
patent: 4608585 (1986-08-01), Keshtbod
patent: 5408115 (1995-04-01), Chang
patent: 5585293 (1996-12-01), Sharma et al.
patent: 5824584 (1998-10-01), Chen et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 5986941 (1999-11-01), Pang et al.
patent: 6344403 (2002-02-01), Madhukar et al.
patent: 6713812 (2004-03-01), Hoefler et al.
patent: 6751125 (2004-06-01), Prinz et al.
patent: 6816414 (2004-11-01), Prinz
patent: 6887758 (2005-05-01), Chindalore et al.
patent: 6911691 (2005-06-01), Tomiie et al.
patent: 2004/0183122 (2004-09-01), Mine et al.
patent: 2004/0238878 (2004-12-01), Sato et al.
patent: 2005/0191808 (2005-09-01), Steimle et al.
Chang et al, “A New SONOS Memory Using Source-Side Injection for Programming”; IEEE Electron Device Letters, vol. 19, No. 7, Jul. 1998.

Affiliated with

Also associated with

Rating

Split gate memory cell and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Split gate memory cell and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split gate memory cell and method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4045834