Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2005-08-02
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S300000
Reexamination Certificate
active
06924527
ABSTRACT:
A non-volatile memory cell that includes a semiconductor substrate, a well region implanted with a first-type dopant formed in the semiconductor substrate, a first doped region implanted with a second-type dopant formed in the semiconductor substrate, a second doped region, formed spaced-apart from the first doped region, implanted with a second-type dopant formed in the semiconductor substrate, the second doped region further including a third region implanted with the first-type dopant, a first dielectric layer disposed over the semiconductor substrate, a floating gate disposed over the first dielectric layer and extending over the well region and a portion of the second doped region, a second dielectric layer disposed over the floating gate, and a control gate disposed over the first dielectric layer and the second dielectric layer.
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patent: 6359303 (2002-03-01), Kanamori
Chen Bin-Shing
Hsu Ching-Hsiang
Leu Len-Yi
Yang Evans Ching-Song
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Rose Kiesha
Winbond Electronics Corporation
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