Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000
Reexamination Certificate
active
06888193
ABSTRACT:
A split gate flash memory. A drain is disposed in the bottom of a trench formed in a substrate. A source is disposed in the substrate outside the trench. A striped floating gate is disposed at a sidewall of the trench, wherein one side of the striped floating gate is near the bottom of the trench, and the other side of the striped floating gate protrudes above the substrate. A control gate winds along the floating gate, wherein one side of the control gate is near the bottom of the trench, and the other side of the control gate in outside the trench. A metal bit line connects to the drain.
REFERENCES:
patent: 6770934 (2004-08-01), Hung et al.
patent: 20040067618 (2004-04-01), Chang et al.
patent: 20040183121 (2004-09-01), Yeh et al.
Nanya Technology Corporation
Ngo Ngan V.
Quintero Law Office
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