Computer-aided design and analysis of circuits and semiconductor – Integrated circuit design processing – Testing or evaluating
Reexamination Certificate
2011-07-12
2011-07-12
Levin, Naum (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Integrated circuit design processing
Testing or evaluating
C438S157000, C438S239000, C257S296000
Reexamination Certificate
active
07979836
ABSTRACT:
A semiconductor structure for a dynamic random access memory cell, the structure including: a fin of a fin-type field effect transistor (FinFET) device formed over and spaced apart from a conductive region of a substrate; a storage capacitor connected to a first end of the fin; and a back-gate at a first lateral side of the fin and in electrical contact with the conductive region.
REFERENCES:
patent: 6441436 (2002-08-01), Wu et al.
patent: 6580137 (2003-06-01), Parke
patent: 6759282 (2004-07-01), Campbell
patent: 6873561 (2005-03-01), Ooishi
patent: 6888199 (2005-05-01), Nowak et al.
patent: 6924178 (2005-08-01), Beintner
patent: 6977404 (2005-12-01), Katsumata et al.
patent: 6980457 (2005-12-01), Horch et al.
patent: 7037790 (2006-05-01), Chang et al.
patent: 7049654 (2006-05-01), Chang
patent: 7105390 (2006-09-01), Brask et al.
patent: 7120046 (2006-10-01), Forbes
patent: 7183164 (2007-02-01), Haller
patent: 7193279 (2007-03-01), Doyle et al.
patent: 7199419 (2007-04-01), Haller
patent: 7208373 (2007-04-01), Weis
patent: 7224020 (2007-05-01), Wang et al.
patent: 7229895 (2007-06-01), Wells
patent: 7241653 (2007-07-01), Hareland et al.
patent: 7247570 (2007-07-01), Thomas
patent: 7253493 (2007-08-01), Wang et al.
patent: 7268058 (2007-09-01), Chau et al.
patent: 7279375 (2007-10-01), Radosavljevic et al.
patent: 7285812 (2007-10-01), Tang et al.
patent: 7321514 (2008-01-01), Schwerin
patent: 7348225 (2008-03-01), Zhu
patent: 7348642 (2008-03-01), Nowak
patent: 7368752 (2008-05-01), Luyken et al.
patent: 7425740 (2008-09-01), Liu et al.
patent: 7504704 (2009-03-01), Currie et al.
patent: 7564084 (2009-07-01), Song
patent: 7569878 (2009-08-01), Weis et al.
patent: 7768051 (2010-08-01), Abbott
patent: 7781283 (2010-08-01), Anderson et al.
patent: 2004/0157396 (2004-08-01), Lee et al.
patent: 2004/0208049 (2004-10-01), Walker
patent: 2004/0266088 (2004-12-01), Luyken et al.
patent: 2005/0254279 (2005-11-01), Schwerin
patent: 2006/0054958 (2006-03-01), Weis et al.
patent: 2006/0057814 (2006-03-01), Weis
patent: 2008/0003753 (2008-01-01), Seo et al.
patent: 2009/0108351 (2009-04-01), Yang et al.
patent: 2010/0232212 (2010-09-01), Anderson et al.
Notice of Allowance dated Apr. 20, 2010 in U.S. Appl. No. 12/192,537.
Anderson Brent A.
Nowak Edward J.
Canale Anthony
International Business Machines - Corporation
Levin Naum
Roberts Mlotkowski Safran & Cole P.C.
LandOfFree
Split-gate DRAM with MuGFET, design structure, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Split-gate DRAM with MuGFET, design structure, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split-gate DRAM with MuGFET, design structure, and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2658536