Split electrode gate trench power device

Details Split electrode gate trench power device Split electrode gate trench power device

2006-07-24

2008-09-09

Manala, Jr., Victor A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S329000, C257S332000, C257SE29131, C257SE29201, C438S270000, C438S271000

Reexamination Certificate

active

07423317

ABSTRACT:
A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners.

REFERENCES:
patent: 6387803 (2002-05-01), Talwar et al.
patent: 6573569 (2003-06-01), Hao et al.
patent: 7061047 (2006-06-01), Ono et al.
patent: 2006/0049453 (2006-03-01), Schmitz et al.
Search Report issued in corresponding PCT Application No. PCT/US06/29384 dated Oct. 4, 2007.

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