Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-09-11
2007-09-11
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257SE21022, C438S238000, C336S200000
Reexamination Certificate
active
10851021
ABSTRACT:
A microelectronic device including, in one embodiment, a plurality of active devices located at least partially in a substrate, at least one dielectric layer located over the plurality of active devices, and an inductor located over the dielectric layer. At least one of the plurality of active devices is located within a columnar region having a cross-sectional shape substantially conforming to a perimeter of the inductor. The at least one of the plurality of active devices may be biased based on a desired Q factor of the inductor or and/or an operating frequency of the microelectronic device.
REFERENCES:
patent: 5717243 (1998-02-01), Lowther
patent: 5748417 (1998-05-01), Malhotra et al.
patent: 5754377 (1998-05-01), Gray et al.
patent: 6194961 (2001-02-01), Passeraub
patent: 6211753 (2001-04-01), Leifso et al.
patent: 6489663 (2002-12-01), Ballantine et al.
patent: 6656813 (2003-12-01), Ahn et al.
patent: 6903644 (2005-06-01), Wang et al.
patent: 2001/0002060 (2001-05-01), Forbes
patent: 2003/0006415 (2003-01-01), Yokogawa et al.
patent: 2003/0034821 (2003-02-01), Mallardeau et al.
patent: 2003/0231093 (2003-12-01), Hsu et al.
patent: 2005/0024176 (2005-02-01), Wang et al.
patent: WO 98/50956 (1998-11-01), None
patent: WO 02/49110 (2002-06-01), None
patent: WO 2004/102665 (2004-11-01), None
Yong-Ho Cho, A Novel Active Inductor and Its Application to Inductance-Controlled Oscillator, IEEE Transactions on Microwave Theory and Techniques, Aug. 1997, pp. 1208-1213, vol. 45, No. 8, 0018-9480/97.
Stepan Lucyszyn, “Monolithic Narrow-Band Filter Using Ultrahigh-Q Tunable Active Inductors”, IEEE Transactions on Microwave Theory and Techniques, Dec. 1994, pp. 2617-2622, vol. 42, No. 12, 0018-9480/94.
Chang Chih-Sheng
Tseng Bor-Min
Haynes and Boone LLP
Kraig William
Lee Eugene
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Spiral inductor with electrically controllable resistivity... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spiral inductor with electrically controllable resistivity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spiral inductor with electrically controllable resistivity... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3761230