Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1995-06-07
1996-11-05
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 34, 117217, 117222, 219424, 373163, C30B 1520
Patent
active
055713203
ABSTRACT:
The invention defines an apparatus for controlling oxygen content in Czochralski silicon crystal pullers in which silicon is melted in a quartz crucible. The apparatus includes a susceptor 10, a quartz crucible 12 in said susceptor, a cable 16 for lowering a seed crystal 14 into silicon melted in said crucible, and a combination spiral heater/magnetic coil 25 for heating and melting silicon in said crucible, and for producing a magnetic field around the crucible.
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patent: 5009865 (1991-04-01), Boden et al.
patent: 5178720 (1993-01-01), Frederick
patent: 5196085 (1993-03-01), Szekely
patent: 5268063 (1993-12-01), Kaneko et al.
Combination Heater-Magnetic Solenoid Coil(s) for Suppressing Melt Convection in Crystal Growth, IBM Technical Bulletin, vol. 26, No. 9, Feb. 1984.
Combination Heater Magnetic Solenoid Coil for Suppressing Melt Convection in Crystal Growth; Giess et al, IBM Technical Disclosures Bulletin (Feb. 1984); Bol. 26, No. 9, p. 4716, 2 refs.
Grimes H. Michael
Hariri Farouk A.
Brady III W. James
Donaldson Richard L.
Franz Warren L.
Garrett Felisa C.
Texas Instruments Incorporated
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