Spin valve head with reduced element gap

Details Spin valve head with reduced element gap Spin valve head with reduced element gap

2005-08-09

2005-08-09

Korzuch, William (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324000, C360S324100, C360S324120, C029S603140, C029S603150

Reexamination Certificate

active

06927949

ABSTRACT:
This invention teaches a way for the shield to shield (S1-S2) distance of a magnetic read head to be reduced. The key feature is that the upper and lower dielectric layers D1and D3, which are normally pure aluminum oxide, have each been replaced by a bilayer dielectric, which consists of aluminum oxide in contact with the shield layer followed by a layer of a high voltage breakdown material. For D1this layer may be either tantalum oxide or tantalum nitride while for D3our preferred material has been tantalum oxide. The addition of the two high breakdown layers allows the thickness of the upper and lower dielectric layers to be reduced without having to reduce the S2—S2voltage difference.

REFERENCES:
patent: 5302461 (1994-04-01), Anthony
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5919581 (1999-07-01), Yamamoto et al.
patent: 5997698 (1999-12-01), Mino et al.
patent: 5999379 (1999-12-01), Hsiao et al.
patent: 6452757 (2002-09-01), Yang et al.
patent: 6466418 (2002-10-01), Horng et al.

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