Spin transistor using perpendicular magnetization

Details Spin transistor using perpendicular magnetization Spin transistor using perpendicular magnetization

2011-08-09

2011-08-09

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29167

Reexamination Certificate

active

07994555

ABSTRACT:
A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.

REFERENCES:
patent: 5654566 (1997-08-01), Johnson
patent: 6355953 (2002-03-01), Kirczenow
patent: 6480412 (2002-11-01), Bessho et al.
patent: 6482729 (2002-11-01), Ohno et al.
patent: 7084468 (2006-08-01), Lee et al.
patent: 7307299 (2007-12-01), Koo et al.
patent: 7397071 (2008-07-01), Sugahara et al.
patent: 2005/0282379 (2005-12-01), Saito et al.
patent: 200392412 (2003-03-01), None
patent: 200648384 (2006-05-01), None
patent: 10-2005-0085717 (2006-06-01), None
Datta et al., “Electronic analog of the electro-optic modulator”, Appl. Phys. Lett 56(7), Feb. 12, 1990, pp. 665-667.

Affiliated with

Also associated with

Rating

Spin transistor using perpendicular magnetization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Spin transistor using perpendicular magnetization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin transistor using perpendicular magnetization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2759924