Spin transistor and magnetic memory

Details Spin transistor and magnetic memory Spin transistor and magnetic memory

2011-06-07

2011-06-07

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29323

Reexamination Certificate

active

07956395

ABSTRACT:
A spin transistor includes a first ferromagnetic layer provided on a substrate and having an invariable magnetization direction, a second ferromagnetic layer provided on the substrate apart from the first ferromagnetic layer in a first direction, and having a variable magnetization direction, a plurality of projecting semiconductor layers provided on the substrate to extend in the first direction, and sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a plurality of channel regions respectively provided in the projecting semiconductor layers, and a gate electrode provided on the channel regions.

REFERENCES:
patent: 7200037 (2007-04-01), Saito et al.
patent: 7248497 (2007-07-01), Saito et al.
patent: 7411235 (2008-08-01), Saito et al.
patent: 7446362 (2008-11-01), Hidaka et al.
patent: 7471492 (2008-12-01), Fukuzawa et al.
patent: 7545013 (2009-06-01), Sugahara et al.
patent: 7598578 (2009-10-01), Nakamura et al.
patent: 7745894 (2010-06-01), Asao et al.
patent: 7759750 (2010-07-01), Hayakawa et al.
patent: 2005/0282379 (2005-12-01), Saito et al.
patent: 2006/0220161 (2006-10-01), Saito et al.
patent: 2007/0164336 (2007-07-01), Saito et al.
patent: 2007/0253120 (2007-11-01), Saito et al.
patent: 2008/0061332 (2008-03-01), Saito et al.
patent: 2009/0057793 (2009-03-01), Koga
patent: 2003-8105 (2003-01-01), None
patent: 2006-286726 (2006-10-01), None
U.S. Appl. No. 12/234,082, filed Sep. 19, 2008, Tsuchiaki, et al.
U.S. Appl. No. 12/339,638, filed Dec. 19, 2008, Sugiyama, et al.
U.S. Appl. No. 12/342,383, filed Dec. 23, 2008, Ishikawa, et al.
Satoshi Sugahara, et al. “A Spin Metal-Oxide-Semiconductor Field-Effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain”, Applied Physics Letters, vol. 84, No. 13, Mar. 29, 2004, pp. 2307-2309.
S. v Alfthan F. Boxberg, et al., “Electronic, Optical, and Structural Properties of Quantum Wire Superlattices on Vicinal (111) GaAs Substrates”, Physical Review B 72, 045329, 2005, pp. 045329-1-045329-8.
U.S. Appl. No. 12/197,710, filed Aug. 25, 2008, Yoshiaki Saito, et al.
U.S. Appl. No. 12/194,797, filed Aug. 20, 2008, Mizue Ishikawa, et al.
U.S. Appl. No. 11/855,322, filed Sep. 14, 2007, Naoharu Sugiyama, et al.
U.S. Appl. No. 12/029,117, filed Feb. 11, 2008, Yoshiaki Saito, et al.

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