Spin transfer torque—magnetic tunnel junction device...

Details Spin transfer torque—magnetic tunnel junction device... Spin transfer torque—magnetic tunnel junction device...

2011-06-28

2011-06-28

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07969767

ABSTRACT:
A method is disclosed that includes controlling current flow direction for current sent over a source line or a bit line of a magnetic memory device. A current generated magnetic field assists switching of a direction of a magnetic field of a free layer of a magnetic element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.

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International Search Report and Written Opinion—PCT/US2010/036645, International Search Authority—European Patent Office—Aug. 11, 2010.

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