Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-03-26
2011-11-15
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C438S003000, C257S422000, C257S423000, C257S427000, C257SE29323, C360S324200, C365S157000, C365S171000
Reexamination Certificate
active
08058697
ABSTRACT:
We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.
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Guo Yimin
Horng Cheng
Tong Ru-Ying
Ackerman Stephen B.
MagIC Technologies, Inc.
Saile Ackerman LLC
Smith Bradley K
Valentine Jami M
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