Spin torque transfer magnetic tunnel junction structure

Details Spin torque transfer magnetic tunnel junction structure Spin torque transfer magnetic tunnel junction structure

2009-04-13

2010-11-16

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257S423000, C438S003000, C365S157000, C360S324200

Reexamination Certificate

active

07834410

ABSTRACT:
The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

REFERENCES:
patent: 7037807 (2006-05-01), Murakami et al.
patent: 7057921 (2006-06-01), Valet
patent: 7088609 (2006-08-01), Valet
patent: 7233039 (2007-06-01), Huai et al.
patent: 7430135 (2008-09-01), Huai et al.
patent: 2003/0067802 (2003-04-01), Anthony et al.
patent: 2004/0233585 (2004-11-01), Boeve
patent: 2008/0198514 (2008-08-01), Jogo et al.
Arnold, Magnetic Units Conversion (http://www.arnoldmagnetics.com/mtc/conversion.htm) printed Jun. 18, 2010 is provided as a teaching reference of conversion between Oersted and kA/m.

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