Spin on oxygen reactive ion etch barrier

Details Spin on oxygen reactive ion etch barrier Spin on oxygen reactive ion etch barrier

1992-03-17

1993-12-14

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430311, 430317, 430329, 156643, 156660, G03F 726

Patent

active

052701514

ABSTRACT:
Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.

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