Spin-on dopant method

Details Spin-on dopant method Spin-on dopant method

1983-12-12

1985-04-30

Lusignan, Michael R.

Coating processes

Electrical product produced

Condenser or capacitor

148188, 427240, B05D 512, B05D 312, H01L 744

Patent

active

045144400

ABSTRACT:
A single step method for boron dopant diffusion implementing both deposition and drive-in diffusions in one furnace process is provided. By using a spin-on dopant in a diffusion furnace with pyrogenic steam and thermal ramping capabilities, sheet resistivities and penetrations to a precision and accuracy of 4% with one furnace step are achievable. The one step method disclosed circumvents the use of two furnace processes to achieve a typical p-type diffusion which requires a deposition in a furnace set at one temperature followed by a drive in diffusion in a furnace set at a second temperature after deglazing in a hydrofluoric acid. Also attainable by the one step process disclosed are resistivity uniformities better than those with the two furnace processes.

REFERENCES:
patent: 3997351 (1976-12-01), Vergano et al.
patent: 4233093 (1980-11-01), Chow
patent: 4249970 (1981-02-01), Briska et al.
patent: 4348428 (1982-09-01), Rockley et al.
D. Rupprecht and J. Stach, J. Electrochem. Soc., BN Wafers as Dopant for Si Diffusion, pp. 1266-1271, Sep. 1973.
T. R. Facey, J. Stach and R. E. Tressler, Proc. Electron., Components Conf. 30th, pp. 44-48, 1980.
Solid State Technology, 1980, vol. 3, No. 7, pp. 69-73.
Solid State Technology, 1976, System Characterization of Planar Source Diffusion, pp. 38-43.
Carborundum Co., Technical Bulletin, PDS.RTM. Boron Nitride High Temperature Planar Diffusion Sources (BN-1100 and BN-1250).
Carborundum Co., Product Data Bulletin, Low Defect Boron Diffusion Processes Using Hydrogen Injection.
Carborundum Co., Technical Bulletin, PDS.RTM. Boron Nitride Low Temperature Planar Diffusion Source (Grade BN-975).
Carborundum Co., Technical Bulletin, Phosphorous N-Type Planar Diffusion Source Grade PH-1000.

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