Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-28
2010-10-12
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27006
Reexamination Certificate
active
07812383
ABSTRACT:
A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6709942 (2004-03-01), Pan et al.
patent: 6751074 (2004-06-01), Inomata et al.
patent: 6777730 (2004-08-01), Daughton et al.
patent: 6987653 (2006-01-01), Inomata et al.
patent: 7038894 (2006-05-01), Inomata et al.
patent: 7508699 (2009-03-01), Hwang et al.
patent: 2002/0145902 (2002-10-01), Kunikiyo et al.
patent: 2005/0040433 (2005-02-01), Nozieres et al.
patent: 2005/0219768 (2005-10-01), Nakamura et al.
patent: 2005/0282379 (2005-12-01), Saito et al.
patent: 2006/0139992 (2006-06-01), Hwang et al.
patent: 2006/0146451 (2006-07-01), Inomata et al.
patent: 2007/0085068 (2007-04-01), Apalkov et al.
patent: 2007/0097736 (2007-05-01), Inokuchi et al.
patent: 2007/0177421 (2007-08-01), Sugiyama et al.
patent: 1368735 (2002-09-01), None
patent: 1556998 (2004-12-01), None
patent: 1713400 (2005-12-01), None
patent: 9-50692 (1997-02-01), None
patent: 2005-50907 (2005-02-01), None
patent: 2006-32915 (2006-02-01), None
patent: 2006-156844 (2006-06-01), None
patent: 2006-165556 (2006-06-01), None
patent: 2006-179524 (2006-07-01), None
patent: 2003-0062280 (2003-07-01), None
Master Thesis of Yonsei University (title: Voltage Difference Amplifying Circuit for Improving Sensing Performance of MRAM), Dec. 2005, 19 pages.
Master Thesis of Yonsei University (title: Study of Low-Voltage High-Speed Circuit for Sensing of MRAM Cell), Jun. 2005, 15 pages.
Y. Asao, et al., “Design Process Integration for High-Density, High-Speed, and Low-Power 6F2, Cross Point MRAM Cell”. IEEE 2004, IEDM Technical Digest, Dec. 2004, pp. 571-574.
U.S. Appl. No. 12/132,664, filed Jun. 4, 2008 Inokuchi, et al.
U.S. Appl. No. 11/737,379, filed Apr. 19, 2007, Yoshiaki Saito, et al.
Yiming Huai, et al., “Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions”, Applied Physics Letters, vol. 84, No. 16, Apr. 19, 2004, pp. 3118-3120.
T. Inokuchi, et al. “Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions”, Applied Physics Letters, 89, 102502 (2006), pp. 102502-1-102502-3.
T. Inokuchi, et al., “Effect of Magnetic Field Applied Along Hard Axis On Current-Induced Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions”, Journal of the Magnetics Society of Japan, vol. 31, No. 2, 2007, pp. 98-102.
Inokuchi Tomoaki
Saito Yoshiaki
Sugiyama Hideyuki
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wilson Allan R.
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