Spin injection write type magnetic memory device

Details Spin injection write type magnetic memory device Spin injection write type magnetic memory device

2007-02-09

2009-06-09

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C257S421000, C977S935000

Reexamination Certificate

active

07545672

ABSTRACT:
A spin injection write type magnetic memory device includes memory cells which have a magnetoresistance effect element and a select transistor. The magnetoresistance effect element has one end connected to a first node. The select transistor has a first diffusion area connected to another end of the magnetoresistance effect element and a second diffusion area connected to a second node. A select line extends along a first direction and is connected to a gate electrode of the select transistor. A first interconnect extends along a second direction and is connected to the first node. A second interconnect extends along the second direction and is connected to the second node. Two of the memory cells adjacent along the first direction share the first node. Two of the memory cells adjacent along the second direction share the second node.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6445612 (2002-09-01), Naji
patent: 6822897 (2004-11-01), Ishikawa
patent: 2007/0206406 (2007-09-01), Ueda et al.
U.S. Appl. No. 12/026,885, filed Feb. 6, 2008, Inaba.
U.S. Appl. No. 11/673,241, filed Feb. 9, 2007, Ueda et al.
U.S. Appl. No. 12/032,135, filed Feb. 15, 2008, Inaba.

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