Spin-injection FET

Details Spin-injection FET Spin-injection FET

2007-04-03

2007-04-03

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

11255101

ABSTRACT:
An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.

REFERENCES:
patent: 6538921 (2003-03-01), Daughton et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6751074 (2004-06-01), Inomata et al.
patent: 6987653 (2006-01-01), Inomata et al.
patent: 7020013 (2006-03-01), Johnson
patent: 2005/0057960 (2005-03-01), Saito et al.
patent: 2005/0185347 (2005-08-01), Inomata et al.
U.S. Appl. No. 11/255,101, filed Oct. 21, 2005, Saito et al.
U.S. Appl. No. 11/367,483, filed Mar. 6, 2006, Inomata et al.
Satoshi Sugahara, et al. “A Spin Metal-Oxide-Semiconductor Field-Effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain”; Applied Physics Letters; vol. 84; No. 13; Mar. 29, 2004; pp. 2307-2309.
U.S. Appl. No. 11/242,906, filed Oct. 5, 2005, Yoshiaki Saito, et al.
U.S. Appl. No. 11/149,267, filed Jun. 10, 2005, Yoshiaki Saito, et al.

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