Spin field effect transistor using half metal and method of...

Details Spin field effect transistor using half metal and method of... Spin field effect transistor using half metal and method of...

2011-05-03

2011-05-03

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE29323

Reexamination Certificate

active

07936028

ABSTRACT:
A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3(A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

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International Search Report dated May 18, 2009 in corresponding International Application No. PCT/KR2008/006477.

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