Spin dependent tunneling memory

Static information storage and retrieval – Systems using particular element – Magnetoresistive

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365145, 365154, 365157, G11C 700

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active

060210656

ABSTRACT:
A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

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